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KM416V4 CMOS DRAM

KM416V4 CMOS DRAM Series Datasheet

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle (4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption (Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using SAMSUNG 's advanced CMOS process to realize high band-width, low power consumption and high reliability.


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KM416V4000AS-6 KM416V4004BS-L5 KM416V4004CS-6 KM416V4004CS-L5
KM416V4004CS-L6 KM416V4004CSI-L5 KM416V4100AS-6 KM416V4100AS-L6
KM416V4100BS-L6 KM416V4100CS-6 KM416V4100CS-L5 KM416V4100CS-L6
KM416V4104AS-5 KM416V4104AS-6 KM416V4104AS-L5 KM416V4104AS-L6
KM416V4104BS-5 KM416V4104BS-6 KM416V4104BS-L6 KM416V4104CS-5
KM416V4104CS-6 KM416V4104CS-L5 KM416V4104CS-L6 KM416V4104CSI-5
KM416V4104CSI-L5
KM416V4 CMOS DRAM Series Part Photos
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Additional Images ( 1 )
KM416V4104CS-5 photos
KM416V4104CS-5 (3)

KM416V4 CMOS DRAM


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Ordering Information
Select from our Available Inventory for an Immediate Price Quote
KM416V4000AS-6 KM416V4004BS-L5 KM416V4004CS-6 KM416V4004CS-L5
KM416V4004CS-L6 KM416V4004CSI-L5 KM416V4100AS-6 KM416V4100AS-L6
KM416V4100BS-L6 KM416V4100CS-6 KM416V4100CS-L5 KM416V4100CS-L6
KM416V4104AS-5 KM416V4104AS-6 KM416V4104AS-L5 KM416V4104AS-L6
KM416V4104BS-5 KM416V4104BS-6 KM416V4104BS-L6 KM416V4104CS-5
KM416V4104CS-6 KM416V4104CS-L5 KM416V4104CS-L6 KM416V4104CSI-5
KM416V4104CSI-L5

KM416V4 CMOS DRAM


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KM416V4 CMOS DRAM Part Photos
additional photos
KM416V4 CMOS DRAM
KM416V4104CS-5 photos
KM416V4104CS-5
KM416V4104CS-5 photos
KM416V4104CS-5
KM416V4104CS-5 photos
KM416V4104CS-5

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