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K4S64 Synchronous DRAM

K4S64 Synchronous DRAM Series Datasheet

The SAMSUNG K4S640832N / K4S641632N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.


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K4S640832N-LC75 K4S641632N-LC60 K4S641632N-LC60T K4S641632N-LC75
K4S641632N-LC75000 K4S641632N-LI60 K4S641632N-LI75 K4S641632N-LI75T00
K4S641632N-LL75 K4S641632N-LP75
K4S64 Synchronous DRAM Series Part Photos
K4S641632N-LC60 photos
K4S641632N-LC60 (3)

K4S64 Synchronous DRAM


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Ordering Information
Select from our Available Inventory for an Immediate Price Quote
K4S640832N-LC75 K4S641632N-LC60 K4S641632N-LC60T K4S641632N-LC75
K4S641632N-LC75000 K4S641632N-LI60 K4S641632N-LI75 K4S641632N-LI75T00
K4S641632N-LL75 K4S641632N-LP75

K4S64 Synchronous DRAM


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Marking Information

K4S64 Synchronous DRAM


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K4S64 Synchronous DRAM Part Photos
K4S641632N-LC60 photos
K4S641632N-LC60
K4S641632N-LC60 photos
K4S641632N-LC60
K4S641632N-LC60 photos
K4S641632N-LC60

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